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Features
? Single 2.7V - 3.6V Supply
? Serial Peripheral Interface (SPI) Compatible
– Supports SPI Modes 0 and 3
? 70 MHz Maximum Clock Frequency
? Flexible, Uniform Erase Architecture
– 4-Kbyte Blocks
– 32-Kbyte Blocks
– 64-Kbyte Blocks
– Full Chip Erase
8-megabit
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Individual Sector Protection with Global Protect/Unprotect Feature
– One 32-Kbyte Top Boot Sector
– Two 8-Kbyte Sectors
– One 16-Kbyte Sector
– Fifteen 64-Kbyte Sectors
Hardware Controlled Locking of Protected Sectors
Flexible Programming Options
– Byte/Page Program (1 to 256 Bytes)
– Sequential Program Mode Capability
Automatic Checking and Reporting of Erase/Program Failures
JEDEC Standard Manufacturer and Device ID Read Methodology
Low Power Dissipation
– 5 mA Active Read Current (Typical)
– 25 μA Deep Power-down Current (Typical)
Endurance: 100,000 Program/Erase Cycles
Data Retention: 20 Years
Complies with Full Industrial Temperature Range
Industry Standard Green (Pb/Halide-free/RoHS Compliant) Package Options
2.7-volt
Minimum
SPI Serial Flash
Memory
AT26DF081A
– 8-lead SOIC (150-mil and 200-mil wide)
1. Description
The AT26DF081A is a serial interface Flash memory device designed for use in a
wide variety of high-volume consumer-based applications in which program code is
shadowed from Flash memory into embedded or external RAM for execution. The
flexible erase architecture of the AT26DF081A, with its eras\e granularity as small as
4 Kbytes, makes it ideal for data storage as well, eliminating the need for additional
data storage EEPROM devices.
The physical sectoring and the erase block sizes of the AT26DF081A have been opti-
mized to meet the needs of today’s code and data storage applications. By optimizing
the size of the physical sectors and erase blocks, the memory space can be used
much more efficiently. Because certain code modules and data storage segments
must reside by themselves in their own protected sectors, the wasted and unused
memory space that occurs with large sectored and large block erase Flash memory
devices can be greatly reduced. This increased memory space efficiency allows addi-
tional code routines and data storage segments to be added while still maintaining the
same overall device density.
3600G–DFLASH–06/09
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相关代理商/技术参数
AT26DF081A-SSU-RET 制造商:Atmel Corporation 功能描述:
AT26DF081A-ST-B 制造商:Adesto Technologies Corporation 功能描述:8-SOIC-W, AUTO GRADE 3, 2.7V, TUBE - Rail/Tube
AT26DF081A-ST-T 制造商:Adesto Technologies Corporation 功能描述:8-SOIC-W, AUTO GRADE 3, 2.7V, T&R - Tape and Reel
AT26DF081A-SU 功能描述:闪存 8M 8 I/O Pins SPI 256B 2.7V-3.6V RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel
AT26DF081-MU 制造商:Adesto Technologies Corporation 功能描述:SF DATAFLASH, 8M, MLF, IND TEMP,GREEN - Trays
AT26DF081-SU 制造商:Adesto Technologies Corporation 功能描述:SF DATAFLASH, 8M, SOIC ,IND TEMP, GREEN - Rail/Tube
AT26DF161 制造商:ATMEL 制造商全称:ATMEL Corporation 功能描述:16-megabit 2.7-volt Only Serial Firmware DataFlash Memory
AT26DF161_06 制造商:ATMEL 制造商全称:ATMEL Corporation 功能描述:16-megabit 2.7-volt Only Serial Firmware DataFlash Memory